How does the breakdown voltage of a transistor technology affect maximum output power?
PA Classes
Doherty amplifier: the dominant PA architecture for modern cellular base stations. It uses a main (carrier) amplifier (Class AB) and a peaking amplifier (Class C) combined through a quarter-wave transformer. At low signal levels: only the main amplifier is active (high efficiency because it's near compression). At high signal levels: the peaking amplifier turns on and contributes additional power. The quarter-wave combiner modulates the load impedance seen by the main amplifier, maintaining high efficiency across a wide output power range. Typical Doherty efficiency: 40-55% at average power (compared to 15-25% for a single Class AB PA at the same back-off). Doherty PA is essential for OFDM signals with high PAPR.
Frequently Asked Questions
Which PA class for my application?
For linear modulation (QAM, OFDM, 4G/5G): Class AB (simple) or Doherty (high efficiency at back-off). For constant envelope (FM, GMSK): Class C or Class E (highest efficiency). For high-power broadcast: Doherty (AM) or Class E (FM). For wideband military/SDR: Class AB with DPD (best linearity-bandwidth combination). For smartphone: Class AB with envelope tracking (best battery life).
How do I improve efficiency?
Doherty architecture: +10-15% efficiency improvement at back-off. Envelope tracking: +10-15% improvement. DPD: allows operating at reduced back-off, improving efficiency by 5-15%. Harmonic tuning (Class F, inverse Class F): +5-10% compared to Class AB at the same output power. GaN technology: higher breakdown voltage allows higher drain voltage, improving efficiency by 5-10% compared to LDMOS or GaAs at the same power level.
What about GaN vs. LDMOS vs. GaAs?
GaN HEMT: highest power density (5-10 W/mm), highest operating voltage (28-50V), broadband (high impedance simplifies matching), best for: 5G base stations, radar, military EW. LDMOS: mature, cost-effective, high power (up to 1 kW per device), moderate voltage (28-50V), best for: cellular base stations below 4 GHz, broadcast. GaAs HBT: highest efficiency at low voltage (3.3-5V), best for: smartphone PAs. SiGe: integrated with CMOS digital, best for: mmWave PAs (28/39/77 GHz).