Transmission Lines

CPW-to-SIW Transition

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Bridging two very different guiding structures, this interconnect launches energy from a planar coplanar waveguide feed into a substrate integrated waveguide realized inside the same PCB or LTCC stack-up. A tapered current probe formed by the CPW center strip penetrates the SIW broadwall near one via sidewall, converting the quasi-TEM CPW field into the half-sinusoid TE10 mode of the waveguide. Surrounding via fences suppress parallel-plate leakage so that a single transition reaches better than 15 dB return loss over a 25 to 35% fractional bandwidth with 0.3 to 0.8 dB insertion loss, making it the workhorse feed for millimeter-wave SIW filters, antennas, and integrated front ends.
Category: Transmission Lines
Return Loss: > 15 dB
Fractional BW: 25 to 35%

Launching a Planar Feed Into Substrate Integrated Waveguide

Substrate integrated waveguide gives designers the low loss and high power handling of a rectangular waveguide while keeping everything inside a flat multilayer board: two copper planes form the broadwalls and two rows of plated vias emulate the sidewalls. The catch is that nothing on a PCB naturally excites the SIW TE10 mode. Active devices, connectors, and microstrip or coplanar circuits all speak in quasi-TEM, so a transition is required to reshape that field into the vertical, half-sinusoid distribution the waveguide wants. The CPW-to-SIW transition solves this for coplanar feeds, which are attractive at millimeter-wave frequencies because they avoid backside vias and present a ground-signal-ground footprint that probes and flip-chip dies mate with directly.

The most common topology is the tapered current probe. The CPW center conductor extends past the SIW edge and narrows into a metal finger that drops into the dielectric near one of the via sidewalls. Because the TE10 field peaks at the waveguide center and vanishes at the walls, the probe samples a fraction of that half-sine profile set by its lateral position, which controls the real part of the input impedance. Probe length controls the reactance. By co-optimizing position and length the designer presents a clean 50 ohm match back to the CPW. A second family, the tapered-slot or antipodal design, instead morphs the CPW slots into the SIW aperture over a smooth taper, trading a longer footprint for wider bandwidth.

Mode Conversion and the Cutoff Constraint

The transition is fundamentally a mode conversion problem. The usable band sits above the TE10 cutoff and below the TE20 onset, exactly as in a hollow waveguide, but the effective width is reduced by the dielectric and by the via-wall offset. Getting the via geometry right is what keeps the SIW behaving like a solid-wall guide rather than a leaky slot array.

Governing Equations

SIW effective width (solid-wall equivalent):
weff ≈ w − d2 / (0.95 × p)

TE10 cutoff frequency:
fc = c / (2 × weff × √εr)

Via fence design rules (low leakage):
d > λg / 5  and  p < 2 × d

Guide wavelength in the SIW:
λg = λ0 / √(εr − (λ0 / (2 × weff))2)

Where w = center-to-center via row spacing, d = via diameter, p = via pitch, εr = substrate permittivity, λ0 = free-space wavelength. Example: w = 4.0 mm, d = 0.5 mm, p = 0.8 mm on εr = 2.2 gives weff ≈ 3.67 mm and fc ≈ 27.6 GHz.

Transition Topology Comparison

Transition TypeTypical Return LossFractional BWFootprintInsertion LossBest Use
CPW current probe> 15 dB25 to 35%Compact (~λg/4)0.3 to 0.8 dBOn-wafer probing, flip-chip
CPW tapered slot> 18 dB35 to 50%Long taper0.4 to 0.9 dBWideband mmWave links
Microstrip taper> 20 dB30 to 45%Medium0.2 to 0.6 dBSingle-layer SIW boards
GCPW probe> 15 dB20 to 30%Compact0.4 to 0.9 dBThick or lossy substrates
Aperture / slot coupled> 15 dB15 to 25%Multilayer0.5 to 1.2 dBStacked LTCC modules
Common Questions

Frequently Asked Questions

How does a CPW-to-SIW current-probe transition actually couple power into the waveguide?

The CPW center strip extends past the SIW edge and tapers into a probe that penetrates roughly λg/4 into the dielectric near one sidewall, launching the vertical E-field of the TE10 mode. Probe length sets the input reactance; the probe's lateral position relative to the sidewall, which determines how much of the half-sine field it samples, sets the resistance. Both are tuned for a 50 ohm match, and a via fence around the probe confines the field and blocks parallel-plate leakage.

What return loss and bandwidth can a single CPW-to-SIW transition realistically achieve?

An optimized current-probe transition delivers better than 15 dB return loss across a 25 to 35% fractional bandwidth, with 0.3 to 0.8 dB insertion loss per transition. Back-to-back structures show 0.6 to 1.2 dB total. The band is bounded by the TE10 cutoff below and the TE20 onset above. On 0.254 mm RT/duroid 5880 at Ka-band, designs covering 26 to 40 GHz with better than 18 dB return loss are routine.

Why use a via fence around the CPW launch instead of a solid metal wall?

SIW lives entirely inside a PCB or LTCC stack, so solid sidewalls are impossible; two rows of plated vias emulate them. To behave like a continuous wall the vias must satisfy d > λg/5 and p < 2d, keeping inter-via leakage to a fraction of a dB. The same fence around the CPW probe shorts the parallel-plate mode and forces the return current through the intended path, preventing surface-wave loss and radiation that would wreck the return loss.

mmWave Interconnects

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