What is the bandwidth limit of current photodetectors for high frequency RF photonic links?
Photodetector Bandwidth Limits
Photodetector bandwidth is the current bottleneck for extending photonic link technology beyond 100 GHz into the sub-THz and THz regimes.
- Performance verification: confirm specifications against the application requirements before finalizing the design
- Environmental factors: temperature range, humidity, and vibration affect long-term reliability and parameter drift
- Cost vs. performance: evaluate whether the application demands premium components or standard commercial grades
Frequently Asked Questions
Can I buy a 100 GHz photodetector?
Yes. Commercial sources: Discovery Semiconductors (DSC series): 50-70 GHz 3 dB bandwidth. Finisar/II-VI (XPDV series): 50-70 GHz. u2t Photonics (now Thorlabs): XPDV series up to 75+ GHz. NTT Electronics: UTC-PDs with 100+ GHz bandwidth (limited availability). Fraunhofer HHI: custom UTC-PDs up to 150 GHz for research. Cost: $500-5000 per device (depending on bandwidth and packaging). Packaging: coaxial (V-connector, 1.0mm), waveguide (WR-10 for W-band), or chip-on-carrier (for custom integration).
What about silicon germanium PDs?
SiGe PDs (for silicon photonic platforms): bandwidth: 40-50 GHz (current state-of-the-art on GlobalFoundries/IMEC platforms). Responsivity: 0.5-0.8 A/W at 1550 nm (comparable to InGaAs). Advantage: monolithic integration with silicon photonic waveguides and CMOS electronics. Disadvantage: the Ge absorber is strained (lattice mismatch with Si), limiting the thickness and responsivity. Dark current: higher than InGaAs PDs (Ge has smaller bandgap). SiGe PDs are the standard for silicon photonic transceivers used in data center interconnects (> 100 billion units/year market).
How does PD saturation affect linearity?
At high photocurrent: the space-charge buildup in the depletion region distorts the electric field, causing: compression (the photocurrent no longer increases linearly with optical power), increased distortion (OIP3 degrades), and bandwidth reduction (the modified field changes carrier transit times). The saturation photocurrent (I_sat) depends on: PD area (larger area = higher I_sat), bias voltage (higher reverse bias extends the linear range), and PD design (UTC PDs have much higher I_sat than PIN PDs). For high-linearity analog links: operate at I_PD < I_sat/2 (the linear regime). Use UTC PDs for high-power applications.