De-Embedding (EM)
How a Simulated Fixture Replaces Physical Standards
Every measured device sits behind a fixture: a coax connector, a probe tip, a microstrip launch, a bond wire, or a soldered footprint that contributes loss, phase delay, and reflections of its own. Measurement-based correction methods such as TRL or SOLT remove those effects by fabricating known standards on the same substrate and back-solving the error terms. EM de-embedding takes the opposite route. The engineer constructs a geometrically accurate model of the fixture inside a full-wave solver, drives it with the same port impedances and modes used in the measurement, and exports an S-parameter file that describes the fixture alone. Because no physical standards are built, the technique applies to one-of-a-kind asymmetric structures that have no measurable calibration counterpart.
The removal itself relies on a property of cascaded networks: scattering parameters do not multiply, but transfer scattering parameters do. The measured data and both simulated fixture halves are converted to T-parameter matrices, the fixture inverses are placed on the left and right of the measured cascade, and the matrix product collapses to the device sitting alone at its true terminals. Converting that product back to S-parameters yields the de-embedded result. The procedure is exact in principle, so its real-world accuracy is governed entirely by how well the model matches the hardware, which makes substrate and conductor characterization the decisive step rather than an afterthought.
This dependence on model fidelity is also the method's main hazard. A wrong dielectric constant, an unmodeled via stub, or a smooth-conductor assumption that ignores surface roughness all leak directly into the recovered device parameters with no measurement to catch them. The defensive habit is the 2x-thru: simulate a back-to-back fixture pair, de-embed one half from the measured thru, and confirm the result approximates a lossless zero-length connection. Any deviation flags a model error before a real device is misjudged.
Governing Math: T-Parameter Cascade Inversion
[Tmeas] = [TL] × [TDUT] × [TR]
De-embedded device:
[TDUT] = [TL]−1 × [Tmeas] × [TR]−1
S ↔ T conversion (2-port):
T11 = −det(S) / S21, T12 = S11 / S21
T21 = −S22 / S21, T22 = 1 / S21
Reference-plane phase shift per fixture length:
φ = β × ℓ = (2πf / c) × √εeff × ℓ
Where TL, TR = simulated left/right fixture halves; TDUT = intrinsic device; det(S) = S11S22 − S12S21; β = phase constant; εeff = effective permittivity; ℓ = de-embedded length. Example: a 6 mm microstrip launch on εeff ≈ 6.5 at 60 GHz adds φ ≈ 1,100° that the inverse removes.
EM De-Embedding vs. Other Fixture-Removal Methods
| Method | Standards Needed | Best Frequency | Handles Asymmetric Fixture? | Limiting Error Source |
|---|---|---|---|---|
| EM de-embedding | None (full-wave model) | 40 to 110 GHz | Yes | Material & mesh fidelity |
| TRL calibration | Thru, reflect, line(s) | 2 to 67 GHz | No | Line length / band ratio |
| SOLT calibration | Short, open, load, thru | DC to 50 GHz | No | Load & open model error |
| Port extension | None (length only) | Any (phase only) | No | Ignores loss & mismatch |
| 2x-thru (AFR) | One back-to-back thru | 1 to 50 GHz | Symmetric only | Fixture asymmetry |
Frequently Asked Questions
When should I use EM de-embedding instead of TRL calibration?
Reach for EM de-embedding when clean physical standards are impractical: soldered surface-mount fixtures, bond-wire transitions, or coax-to-microstrip launches with irregular keep-outs. You build a full-wave model in HFSS, CST, or ADS Momentum and remove it numerically. It shines above 40 GHz where fabrication tolerances make discrete TRL standards unreliable, and it can de-embed a single asymmetric structure that has no measurable counterpart. The accuracy ceiling is set by how well the model captures εr, conductor roughness, and connector parasitics.
How does T-parameter cascading remove the fixture from measured data?
S-parameters do not multiply across cascaded networks, so the measured data is converted to transfer (T) parameters, which do. With [Tmeas] = [TL][TDUT][TR], the device is recovered as [TDUT] = [TL]−1[Tmeas][TR]−1, then converted back to S-parameters. It is exact only when the fixture model is exact and the de-embedding planes share matched reference impedances, so any model error feeds straight into the result. A 2x-thru self-check catches that first.
What error sources limit EM de-embedding accuracy above 50 GHz?
Material uncertainty and reference-plane ambiguity dominate. Substrate εr and loss tangent drift 2 to 5% lot to lot, and conductor roughness adds 0.1 to 0.3 dB/cm of extra loss at 60 GHz that smooth-conductor models miss. Mesh must converge until S-parameters shift under 0.01 dB and 0.5° between adaptive passes. Done well, magnitude accuracy stays near 0.1 dB and phase near 1 to 2° through 67 GHz, degrading toward 110 GHz as unmodeled physics grows.