Covered Microstrip
How a Top Cover Reshapes the Microstrip Field
Open microstrip is an inhomogeneous, quasi-TEM line: the electric field above the strip arcs through air while the field beneath it sits in the substrate, so the mode sees a blend of the two media. Lowering a grounded conductor over the top of the structure forces some of those air-side field lines to terminate on the cover instead of looping back to the ground plane below. That extra termination path increases the capacitance per unit length C while leaving the inductance per unit length L almost unchanged, and because Z0 ≈ √(L/C), the impedance falls. The same added capacitance raises the effective permittivity, slowing the phase velocity and increasing propagation delay along the line.
The magnitude of the effect is governed by the dimensionless ratio of cover height to substrate thickness, hcover/h. When the lid is far away (hcover/h above about 10) the air-side fields close almost entirely on the lower ground and the line behaves like conventional open microstrip. As the lid descends, the perturbation grows monotonically; in the extreme of a symmetric, very low cover the geometry degenerates toward a stripline with a nearly pure TEM mode. Most real designs operate in the middle of this range, where the cover is a package lid or shield positioned a few substrate thicknesses above the board.
Conformal-mapping and variational solutions, such as those tabulated by Bahl, Garg, and the classic Hammerstad-Jensen formulation extended to the covered case, let designers compute the corrected Z0 and effective permittivity from hcover/h, the width-to-height ratio W/h, and the substrate εr. In practice a field solver is used for tight tolerances, but the closed-form corrections are accurate to a few percent and are excellent for first-pass synthesis.
Governing Relationships
Z0 = √(L / C), so increasing C lowers Z0
Effective permittivity vs. phase velocity:
εeff = (c / vp)2, with 1 < εeff < εr
Cover correction (capacitive loading):
Ccovered ≈ Copen × [1 + Δ(W/h, hcover/h)]
Where L, C = inductance and capacitance per unit length, c = speed of light, vp = phase velocity, εr = substrate relative permittivity, h = substrate thickness, hcover = lid height above the ground plane, and Δ → 0 as hcover/h grows beyond ≈ 10. Example: a 50 Ω open line on εr = 9.8 alumina (h = 0.254 mm) with a cover at hcover/h ≈ 2 drops to roughly 47 to 48 Ω.
Cover Height vs. Impedance Perturbation
| Cover ratio hcover/h | Approx. Z0 shift | εeff change | Behavior | Design guidance |
|---|---|---|---|---|
| > 10 | < 0.5% | Negligible | Essentially open microstrip | No correction needed |
| 5 to 10 | −0.5 to −2% | Small rise | Mild capacitive loading | Add margin in synthesis |
| 2 to 5 | −2 to −6% | Moderate rise | Clear covered-microstrip regime | Widen trace or model lid |
| 1 to 2 | −6 to −15% | Large rise | Strong cover coupling | Full-wave solve required |
| ≈ 1 (symmetric) | Approaches stripline | Toward εr | Near-TEM, low dispersion | Treat as stripline |
Frequently Asked Questions
How high should the cover be so it does not affect microstrip impedance?
Keep the lid at least 5 times the substrate thickness above the ground plane, and 10 times for tight tolerances. On 0.254 mm (10 mil) alumina, a lid 1.3 mm high keeps the Z0 shift under about 1%, while a 0.5 mm lid can pull a 50 Ω line down to 47 to 48 Ω. If a housing or shield must sit closer than 5h, widen the trace during synthesis to recover the target impedance.
Why does adding a metal cover lower the characteristic impedance of microstrip?
The cover acts as a second ground above the strip, so fringing field lines that once terminated in air now land on the lid. That raises the shunt capacitance per unit length C, and since Z0 ≈ √(L/C), increasing C lowers Z0. The added capacitance also nudges the effective permittivity upward, slightly increasing propagation delay.
Does a covered microstrip behave like a stripline?
Only when the cover is very low and roughly symmetric. At normal package-lid heights of several substrate thicknesses the line stays in the microstrip regime, retaining quasi-TEM dispersion with a modestly perturbed Z0 and εeff. As the air gap shrinks to match the substrate height, the mode approaches pure TEM and the effective permittivity migrates toward the bulk substrate value, the stripline limit.