Power Amplifiers

High Power
Amplifiers

GaN and GaAs MMIC-based solid-state power amplifier modules with waveguide interfaces. Split-block construction, integrated thermal management, and gold-plated housings for maximum output power across mmWave and microwave bands.

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18 - 110
GHz Range
Up to 250W
Psat Output
GaN / GaAs
MMIC Technology
USA
Made in America
Overview

Solid-State Power for Critical Systems

RF Essentials high power amplifiers are designed for applications where output power, gain flatness, and thermal stability are non-negotiable. Every module is built with split-block machined housings, gold-plated waveguide interfaces, and integrated heatsinking for continuous operation under demanding conditions.

Our HPAs cover the standard waveguide bands from WR-42 (18 GHz) through WR-8 (110 GHz), with output power levels ranging from hundreds of milliwatts at the highest frequencies to hundreds of watts at Ka-band and below. GaN technology is used where output power density is paramount; GaAs pHEMT MMICs are selected where gain flatness and noise performance are critical.

High Power Amplifier Module with waveguide interface
Product Catalog

High Power Amplifiers by Waveguide Band

Each row represents a standard waveguide band where RF Essentials offers high power amplifier modules. Specifications shown are representative of standard configurations. Custom frequency ranges, output power levels, and packaging options are available on request.

11 Waveguide Bands
WR Band Frequency Range Typical Psat Typical Gain Technology Interface
WR-42 18.0 – 26.5 GHz 10 – 250 W 20 – 40 dB GaN WR-42 / 2.92mm Request Quote →
WR-28 26.5 – 40.0 GHz 5 – 100 W 18 – 35 dB GaN WR-28 / 2.92mm Request Quote →
WR-22 33.0 – 50.0 GHz 2 – 40 W 18 – 30 dB GaN / GaAs WR-22 Request Quote →
WR-19 40.0 – 60.0 GHz 1 – 20 W 18 – 28 dB GaN / GaAs WR-19 Request Quote →
WR-15 50.0 – 75.0 GHz 500 mW – 10 W 15 – 25 dB GaN / GaAs WR-15 Request Quote →
WR-12 60.0 – 90.0 GHz 250 mW – 5 W 15 – 22 dB GaAs WR-12 Request Quote →
WR-10 75.0 – 110.0 GHz 100 mW – 2 W 12 – 20 dB GaAs / InP WR-10 Request Quote →
WR-8 90.0 – 140.0 GHz 50 – 500 mW 10 – 18 dB GaAs / InP WR-8 Request Quote →
WR-6 110.0 – 170.0 GHz 20 – 200 mW 10 – 15 dB InP WR-6 Request Quote →
WR-5 140.0 – 220.0 GHz 10 – 100 mW 8 – 14 dB InP WR-5 Request Quote →
WR-3 220.0 – 325.0 GHz 1 – 30 mW 6 – 12 dB InP WR-3 Request Quote →

All specifications are typical and subject to change. Contact engineering for detailed datasheets and custom requirements.

Engineering

Design & Construction

GaN & GaAs MMIC

Gallium Nitride for maximum power density at Ka-band and below. Gallium Arsenide pHEMT and InP for gain flatness and efficiency at V-band through W-band.

Thermal Management

Integrated heatsinking and cold-plate mounting options for continuous duty operation. Designed for stable performance across extended temperature ranges.

Split-Block Housing

Precision CNC-machined split-block construction with gold-plated waveguide channels. Ensures low insertion loss, repeatable performance, and hermetic sealing where required.

Full Characterization

Every unit ships with measured gain, P1dB, Psat, and VSWR data. S-parameter files and detailed test reports available on request.

Bias & Protection

Built-in bias sequencing, gate voltage regulation, and reverse-polarity protection. Designed for safe hot-swap integration into active RF signal chains.

Custom Configurations

Multi-stage amplifier chains, custom frequency sub-bands, modified flange patterns, and integrated sub-assemblies built to your mechanical and electrical specifications.

Applications

Where Our HPAs Perform

RF Essentials high power amplifiers operate across satellite uplinks, radar transmitters, electronic warfare systems, and high-speed communications links. Every module is designed for the thermal, mechanical, and electrical demands of its target application.

  • Satellite Uplink Transmitters
  • Airborne & Ground Radar
  • Electronic Warfare / EW
  • 5G / 6G mmWave Infrastructure
  • Point-to-Point Microwave Links
  • Test & Measurement Systems
  • Defense Communications
  • Scientific Research Instruments
High Power Amplifier deployed in satellite communications system
FAQ

Frequently Asked Questions

What is the difference between GaN and GaAs power amplifiers?

GaN (Gallium Nitride) amplifiers deliver higher power density and are preferred at Ka-band and below where output power is the primary driver. GaAs (Gallium Arsenide) pHEMT amplifiers offer better gain flatness and lower noise, making them the standard choice at V-band (40-75 GHz) and above. At millimeter wave frequencies beyond 90 GHz, InP (Indium Phosphide) technology is typically required for usable gain and efficiency.

What waveguide bands do RF Essentials high power amplifiers cover?

RF Essentials offers high power amplifier modules across 11 standard waveguide bands: WR-42 (18-26.5 GHz), WR-28 (26.5-40 GHz), WR-22 (33-50 GHz), WR-19 (40-60 GHz), WR-15 (50-75 GHz), WR-12 (60-90 GHz), WR-10 (75-110 GHz), WR-8 (90-140 GHz), WR-6 (110-170 GHz), WR-5 (140-220 GHz), and WR-3 (220-325 GHz). Custom sub-band configurations are available on request.

Can I get a custom frequency range or output power level?

Yes. All RF Essentials high power amplifiers can be configured for custom frequency sub-bands, specific output power targets, modified flange interfaces, and non-standard packaging. Contact our engineering team with your system requirements for a tailored solution.

What thermal management is included in the amplifier modules?

Every RF Essentials HPA module includes integrated heatsinking within the split-block housing. Cold-plate mounting interfaces are standard for system-level integration. For high-duty-cycle or continuous-wave applications, active cooling options including liquid cold plates and forced-air configurations are available.

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For technical specifications, pricing, custom configurations, or datasheet requests on any high power amplifier, contact our engineering team.

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